In this work, we present the behavior of a graphene/silicon Schottky diode exposed to NH3 flow of few tens of parts-per-million (ppm), at standard temperature and humidity conditions. Graphene was synthesized by Liquid Phase Exfoliation and transferred onto the Silicon substrate by drop casting. The Schottky barrier characterization towards NH3 was performed at a reverse bias of -3V in the range 10 ppm-200 ppm. Results show the effect on the device electric current of ammonia concentrations as low as 10 ppm, with a good repeatability of the voltamperometric response. The variations ΔφNH3, of the Schottky barrier, are reported as a function of the gas concentration. A spontaneous restoring is finally observed for the device
Graphene-Si Schottky diode in environmental conditions at low NH3 ppm level
Di Francia, G.;Miscioscia, R.;Miglietta, M.L.;Polichetti, T.
2014-01-01
Abstract
In this work, we present the behavior of a graphene/silicon Schottky diode exposed to NH3 flow of few tens of parts-per-million (ppm), at standard temperature and humidity conditions. Graphene was synthesized by Liquid Phase Exfoliation and transferred onto the Silicon substrate by drop casting. The Schottky barrier characterization towards NH3 was performed at a reverse bias of -3V in the range 10 ppm-200 ppm. Results show the effect on the device electric current of ammonia concentrations as low as 10 ppm, with a good repeatability of the voltamperometric response. The variations ΔφNH3, of the Schottky barrier, are reported as a function of the gas concentration. A spontaneous restoring is finally observed for the deviceI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
