In this work, poly SiGe is proposed as a suitable material for surface micromachining applications that require a low thermal budget. The effect of the deposition conditions and layer thickness on the structural and mechanical properties of poly SiGe is analyzed by means of transmission electron microscopy (TEM) and X-ray diffraction spectroscopy (XRD). It is demonstrated that using as-grown poly SiGe (deposited at 625°C), a low tensile stress (+60 MPa) and a negligible stress gradient can be achieved. © 1999 Kuwait University.

Analysis of the structural properties of polycrystalline silicon germanium films

Loreti, S.
1999-01-01

Abstract

In this work, poly SiGe is proposed as a suitable material for surface micromachining applications that require a low thermal budget. The effect of the deposition conditions and layer thickness on the structural and mechanical properties of poly SiGe is analyzed by means of transmission electron microscopy (TEM) and X-ray diffraction spectroscopy (XRD). It is demonstrated that using as-grown poly SiGe (deposited at 625°C), a low tensile stress (+60 MPa) and a negligible stress gradient can be achieved. © 1999 Kuwait University.
1999
780366433
Silicon germanium;Spectroscopy;X-ray diffraction;Semiconductor films;Transmission electron microscopy;Tensile stress;Micromachining;Mechanical factors;Germanium silicon alloys;X-ray scattering
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/5925
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
social impact