Including Auger-recombination enhancement in the minority-carrier continuity equation and imposing to minority-carrier diffusivity to tend to a constant value allow expressing Coulomb-enhanced (C.E.) Auger lifetime in doped c-Si at room temperature and low-level injection as a function of diffusivity at all dopings. By exploiting reported doping-functions for diffusivity, the new expression for diffusivity-consistent C.E. Auger lifetime is used together with a reported expression for radiative lifetime and constant values for Shockley-Read-Hall lifetime to calculate curves of minority-carrier lifetime and diffusion length vs. doping to be compared to the corresponding curves calculated using a recently reported improved empirical model for C.E. Auger lifetime that does not consider diffusivity. Index Terms - Auger lifetime, silicon, Auger recombination enhancement, minority carriers, diffusivity equation. © 2018 IEEE.
|Titolo:||Diffusivity-Consistent Coulomb-Enhanced Auger lifetime in c-Si|
|Data di pubblicazione:||2018|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|