We present the exact analytical solution to minority-carrier transport in the dark for non-uniformly doped Si regions in low-level injection, where bulk lifetime is inversely proportional to the square of doping density according to the Dziewior and Schmid model of Auger recombination and diffusivity is constant. The relevant expression for emitter saturation current density, J0em, can be set as a function of sheet resistance, RSHEET. Reported measured J0em(RSHEET)-curves in n- and p-type metal-coated emitters are matched by the presented J0em(RSHEET)-expression. To this aim, reported doping functions for band-gap narrowing are set as functions of RSHEET. The application range of the presented solution is checked. © 2018 Author(s).

Saturation current as a function of sheet resistance in Si

Izzi, M.;Abenante, L.
2018

Abstract

We present the exact analytical solution to minority-carrier transport in the dark for non-uniformly doped Si regions in low-level injection, where bulk lifetime is inversely proportional to the square of doping density according to the Dziewior and Schmid model of Auger recombination and diffusivity is constant. The relevant expression for emitter saturation current density, J0em, can be set as a function of sheet resistance, RSHEET. Reported measured J0em(RSHEET)-curves in n- and p-type metal-coated emitters are matched by the presented J0em(RSHEET)-expression. To this aim, reported doping functions for band-gap narrowing are set as functions of RSHEET. The application range of the presented solution is checked. © 2018 Author(s).
9780735417151
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/3488
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