In self-amplified spontaneous emission free electron laser devices, the combined effect of slippage and energy spread impose significant limitations on the power performance. We provide a scaling formula capable of parameterizing the effect in terms of the electron beam parameters and discuss mechanisms leading to the output power optimization. © 2019 SPIE.

Slippage effects on FEL saturated power in short pulse SASE devices

Sabia, E.;Pagnutti, S.;Dattoli, G.;Nguyen, F.
2018

Abstract

In self-amplified spontaneous emission free electron laser devices, the combined effect of slippage and energy spread impose significant limitations on the power performance. We provide a scaling formula capable of parameterizing the effect in terms of the electron beam parameters and discuss mechanisms leading to the output power optimization. © 2019 SPIE.
9781510627505
self-amplified spontaneous emission;short bunch length;free electron laser
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/3683
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
social impact