Here we study the piezopotential, the carrier concentration, and the stored energies in laterally bent piezo-semiconductive NWs with total-bottom contact. Moreover, we give reasons for the well-known existence of two regions where the piezopotential has an opposite sign in comparison with the rest of the NW. Finally, we provide an upper limit to the static mechanical-to-electrical conversion efficiency by computing the ratio between the total stored electrostatic energy and the total (mechanical and electrostatic) stored energy. Our results can provide guidelines for designing devices based on laterally bent piezoelectric NWs. © 2013 Materials Research Society.

Accurate analysis of the piezopotential and the stored energies in laterally bent piezo-semiconductive NWs

Rinaldi, A.
2013

Abstract

Here we study the piezopotential, the carrier concentration, and the stored energies in laterally bent piezo-semiconductive NWs with total-bottom contact. Moreover, we give reasons for the well-known existence of two regions where the piezopotential has an opposite sign in comparison with the rest of the NW. Finally, we provide an upper limit to the static mechanical-to-electrical conversion efficiency by computing the ratio between the total stored electrostatic energy and the total (mechanical and electrostatic) stored energy. Our results can provide guidelines for designing devices based on laterally bent piezoelectric NWs. © 2013 Materials Research Society.
9781632661388
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/3746
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