Schottky barrier solar cells based on graphene/n-silicon heterojunction have been fabricated and characterized and the effect of graphene molecular doping by HNO3 on the solar cells performances have been analyzed. Different doping conditions and thermal annealing processes have been tested to asses and optimize the stability of the devices. The PCE of the cells increases after the treatment by HNO3 and reaches 5% in devices treated at 200 °C immediately before the exposition to the oxidant. Up to now our devices retain about 80% of efficiency over a period of two weeks, which represents a good stability result for similar devices. © 2014 AEIT.
|Titolo:||Effects of HNO3 molecular doping in graphene/Si Schottky barrier solar cells|
|Data di pubblicazione:||2014|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|