The main characteristics of the ENEA Discharge Produced Plasma (DPP) Extreme Ultraviolet (EUV) source are presented together with results of irradiations of various materials. The DPP EUV source, based on a Xe-plasma heated up to a temperature of 30 ÷ 40 eV, emits more than 30 mJ/sr/shot at 10 Hz rep. rate in the 10 ÷ 18 nm wavelength spectral range. The DPP is equipped with a debris mitigation system to protect particularly delicate components needed for patterning applications. The ENEA source has been successfully utilized for sub-micrometer pattern generation on photonic materials and on specifically designed chemically amplified resists. Details down to 100 nm have been replicated on such photoresists by our laboratory-scale apparatus for contact EUV lithography. Preliminary EUV irradiations of graphene films aimed at modifying its properties have been also performed. © 2019 SPIE.
|Titolo:||The ENEA discharge produced plasma extreme ultraviolet source and its patterning applications|
|Data di pubblicazione:||2018|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|