In this work the fabrication of Perovskite/Si tandem-solar cell is reported and discussed. In principle this configuration allows cell efficiency higher than single c-Si junction. While Perovskite cell was used as top cell, a-Si:H/c-Si heterojunction was adopted as a bottom cell. The investigated process starts from Glass/FTO/c-TiO2/n-TiO2/CH3NH3PbI3/ Spiro-OMeTAD/ITO top cell, coupled to an ITO/a-Si:H/c-Si/back reflector/Al heterojunction bottom cell. ITO film is used to join the top and bottom cell. Preliminary results demonstrate the feasibility of the tandem cell, indeed Voc value as high as 1.65mV has been achieved. Numerical simulations is used to evaluate the limit and the potentiality of the proposed tandem structure. © 2015 IEEE.
Perovskite and a-Si:H/c-Si tandem solar cell
Tucci, M.;Mittiga, A.;Stracci, G.;Izzi, M.;Serenelli, L.
2015-01-01
Abstract
In this work the fabrication of Perovskite/Si tandem-solar cell is reported and discussed. In principle this configuration allows cell efficiency higher than single c-Si junction. While Perovskite cell was used as top cell, a-Si:H/c-Si heterojunction was adopted as a bottom cell. The investigated process starts from Glass/FTO/c-TiO2/n-TiO2/CH3NH3PbI3/ Spiro-OMeTAD/ITO top cell, coupled to an ITO/a-Si:H/c-Si/back reflector/Al heterojunction bottom cell. ITO film is used to join the top and bottom cell. Preliminary results demonstrate the feasibility of the tandem cell, indeed Voc value as high as 1.65mV has been achieved. Numerical simulations is used to evaluate the limit and the potentiality of the proposed tandem structure. © 2015 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
