Scope of the work is to get a comprehensive study on electrical and optical characteristics of SiOx:H film within the role of CO and H in the film growth and composition and on how the Oxygen additionchanges the film structure and Hydrogen inclusion in the amorphous matrix and their chemical bonding with silicon. We monitored the effective lifetime tEFF and FTIR spectraon as-deposited and thermal treated samples to understand the passivation mechanism,correlating wafer lifetime and Hydrogen inclusion in sub-oxide film. H dilution in the gas mixture was the key to enhances passivation quality on c-Si wafers. © 2018 IEEE.

Hydrogenated silicon sub-oxide film for an effective and thermal stable silicon surface passivation

Tucci, M.;Bobeico, E.;Menchini, F.;
2018

Abstract

Scope of the work is to get a comprehensive study on electrical and optical characteristics of SiOx:H film within the role of CO and H in the film growth and composition and on how the Oxygen additionchanges the film structure and Hydrogen inclusion in the amorphous matrix and their chemical bonding with silicon. We monitored the effective lifetime tEFF and FTIR spectraon as-deposited and thermal treated samples to understand the passivation mechanism,correlating wafer lifetime and Hydrogen inclusion in sub-oxide film. H dilution in the gas mixture was the key to enhances passivation quality on c-Si wafers. © 2018 IEEE.
9781538685297
amorphous materials;charge carrier lifetime;annealing;silicon
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/4102
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
social impact