The work herein presented investigates the behavior of graphene-based gas sensors realized by using an innovative way to prepare graphene. The sensing layer was directly grown by chemical vapor deposition on pre-patterned CMOS compatible Mo catalyst and then it was eased on the underlying SiO2 through a completely transfer-free process. Devices with different geometries were designed and tested towards NO2 and NH3 in environmental conditions, i.e. room temperature and relative humidity set at 50%. Furthermore, these gas sensors were also calibrated, resulting in the ability to detect concentrations down to 240 ppb and 17 ppm of NO2 and NH3, respectively. These results are in agreement with the best performances reported in literature for graphene-based sensors. They not only confirm the successful devices fabrication through the transfer-free approach, but also pave the route for large-scale production of MEMS/NEMS sensors. © 2016 IEEE.
High sensitive gas sensors realized by a transfer-free process of CVD graphene
Massera, E.;Alfano, B.;Polichetti, T.
2017-01-01
Abstract
The work herein presented investigates the behavior of graphene-based gas sensors realized by using an innovative way to prepare graphene. The sensing layer was directly grown by chemical vapor deposition on pre-patterned CMOS compatible Mo catalyst and then it was eased on the underlying SiO2 through a completely transfer-free process. Devices with different geometries were designed and tested towards NO2 and NH3 in environmental conditions, i.e. room temperature and relative humidity set at 50%. Furthermore, these gas sensors were also calibrated, resulting in the ability to detect concentrations down to 240 ppb and 17 ppm of NO2 and NH3, respectively. These results are in agreement with the best performances reported in literature for graphene-based sensors. They not only confirm the successful devices fabrication through the transfer-free approach, but also pave the route for large-scale production of MEMS/NEMS sensors. © 2016 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
