High conductive graphene films can be grown on metal foils by chemical vapor deposition (CVD). We here analyzed the use of ethanol, an economic precursor, which results also safer than commonly-used methane. A comprehensive range of process parameters were explored in order to obtain graphene films with optimal characteristics in view of their use in optoelectronics and photovoltaics. Commercially-available and electro-polished copper foils were used as substrates. By finely tuning the CVD conditions, we obtained few-layer (2-4) graphene films with good conductivity (∼500 Ohm/sq) and optical transmittance around 92-94% at 550 nm on unpolished copper foils. The growth on electro-polished copper provides instead predominantly mono-layer films with lower conductivity (≥1000 Ohm/sq) and with a transmittance of 97.4% at 550 nm. As for the device properties, graphene with optimal properties as transparent conductive film were produced by CVD on standard copper with specific process conditions.
|Titolo:||Fast growth of polycrystalline graphene by chemical vapor deposition of ethanol on copper|
|Data di pubblicazione:||2014|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|
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|NMDC 2014 (atti congresso)_Fast growth of polycrystalline graphene by chemical vapor deposition of ethanol on copper.pdf||Documento in Pre-print||Licenza per accesso riservato||Administrator Richiedi una copia|