The amorphous /crystalline silicon heterojunction solar cells have largely demonstrated (heir usefulness to reach high efficiency. We have adopted a different and wider bandgap emitter based on silicon oxide, n-SiOx. A central role in this type of structure is played from the TCO workfunction whose value affects strongly the heterojunction's band structure at the emitter interface. RF magnetron sputtered TCO obtained with different deposition parameters, have been made in order to optimize their use in our heterojunction solar cell. Numerical simulation on the SiOx HJ, with TCO having proper workfunction value, show potential efficiency conversion well over the 23%. New Roman Bold font. An example is shown next. © 2015 IEEE.
|Titolo:||Relevance of TCO workfunction in n-silicon oxide emitter - C-Si (p) heterojunction solar cell|
|Data di pubblicazione:||2015|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|