We investigate the electrical transport in quasi-1D piezo-semiconductive NWs under purely vertical compressive or tensile strains. For simplicity, we exclusively consider the additional band bending originated by the piezoelectric charges assumed to be distributed, with a constant volumic density, within a maximum distance δpiezo from the metal-to-NW junction. Our calculations demonstrate that the carrier concentration, the energy conduction band profile and the I-V characteristics significantly depend on δpiezo. We therefore propose that I-V measurements can allow to obtain information on δpiezo in strained piezo-semiconductors. © 2013 Materials Research Society.
Accurate models for the current-voltage characteristics of vertically compressed piezo-semiconductive quasi-1D NWs
Rinaldi, A.
2013-01-01
Abstract
We investigate the electrical transport in quasi-1D piezo-semiconductive NWs under purely vertical compressive or tensile strains. For simplicity, we exclusively consider the additional band bending originated by the piezoelectric charges assumed to be distributed, with a constant volumic density, within a maximum distance δpiezo from the metal-to-NW junction. Our calculations demonstrate that the carrier concentration, the energy conduction band profile and the I-V characteristics significantly depend on δpiezo. We therefore propose that I-V measurements can allow to obtain information on δpiezo in strained piezo-semiconductors. © 2013 Materials Research Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
