We investigate the electrical transport in quasi-1D piezo-semiconductive NWs under purely vertical compressive or tensile strains. For simplicity, we exclusively consider the additional band bending originated by the piezoelectric charges assumed to be distributed, with a constant volumic density, within a maximum distance δpiezo from the metal-to-NW junction. Our calculations demonstrate that the carrier concentration, the energy conduction band profile and the I-V characteristics significantly depend on δpiezo. We therefore propose that I-V measurements can allow to obtain information on δpiezo in strained piezo-semiconductors. © 2013 Materials Research Society.

Accurate models for the current-voltage characteristics of vertically compressed piezo-semiconductive quasi-1D NWs

Rinaldi, A.
2013

Abstract

We investigate the electrical transport in quasi-1D piezo-semiconductive NWs under purely vertical compressive or tensile strains. For simplicity, we exclusively consider the additional band bending originated by the piezoelectric charges assumed to be distributed, with a constant volumic density, within a maximum distance δpiezo from the metal-to-NW junction. Our calculations demonstrate that the carrier concentration, the energy conduction band profile and the I-V characteristics significantly depend on δpiezo. We therefore propose that I-V measurements can allow to obtain information on δpiezo in strained piezo-semiconductors. © 2013 Materials Research Society.
9781632661388
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/4842
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