In this paper, we report on synthesis of graphene film on Cu foil by cold wall CVD and successfully transferred to a photovoltaic cell. The obtained sample was covered with an ultra-thin layer of Ni, of about 4 nm, using a sputtering technique. The optical and electrical properties of graphene/Ni-based films showed superior performance (transmittance =65%, sheet resistance =250 Ω/sq; EQE=40%) compared to films made of ITO/nickel, described in literature, of greater thickness.

Cold wall CVD graphene-based transparent electrode for solar cells

Mercaldo L. V.;Delli Veneri P.;
2019

Abstract

In this paper, we report on synthesis of graphene film on Cu foil by cold wall CVD and successfully transferred to a photovoltaic cell. The obtained sample was covered with an ultra-thin layer of Ni, of about 4 nm, using a sputtering technique. The optical and electrical properties of graphene/Ni-based films showed superior performance (transmittance =65%, sheet resistance =250 Ω/sq; EQE=40%) compared to films made of ITO/nickel, described in literature, of greater thickness.
Cold wall CVD; External quantum efficiency; Graphene; Photovoltaic cell; Transmittance
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/54441
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