In this paper, we report on synthesis of graphene film on Cu foil by cold wall CVD and successfully transferred to a photovoltaic cell. The obtained sample was covered with an ultra-thin layer of Ni, of about 4 nm, using a sputtering technique. The optical and electrical properties of graphene/Ni-based films showed superior performance (transmittance =65%, sheet resistance =250 Ω/sq; EQE=40%) compared to films made of ITO/nickel, described in literature, of greater thickness.

Cold wall CVD graphene-based transparent electrode for solar cells

Mercaldo L. V.;Delli Veneri P.;
2019-01-01

Abstract

In this paper, we report on synthesis of graphene film on Cu foil by cold wall CVD and successfully transferred to a photovoltaic cell. The obtained sample was covered with an ultra-thin layer of Ni, of about 4 nm, using a sputtering technique. The optical and electrical properties of graphene/Ni-based films showed superior performance (transmittance =65%, sheet resistance =250 Ω/sq; EQE=40%) compared to films made of ITO/nickel, described in literature, of greater thickness.
2019
Cold wall CVD; External quantum efficiency; Graphene; Photovoltaic cell; Transmittance
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/54441
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
social impact