Proton beams of energy 3 and 7 MeV, produced by a linear accelerator for protontherapy under development at ENEA Frascati, were used to irradiate lithium fluoride (LiF) crystals and 1 μm thick LiF films grown by thermal evaporation on glass substrates, in a fluence range from 1011 to 1015 protons/cm2. The irradiation of LiF induced the stable formation of aggregate visible-emitting F2 and F 3 + color centers, which possess almost overlapping absorption bands around 450 nm and, under optical pumping in this spectral region, they simultaneously emit broad photoluminescence bands, peaked at 678 nm and 541 nm, respectively. Their laser excited emission spectra were acquired and the integrated photoluminescence signal was measured using a fluorescence optical microscope equipped with a cooled s-CMOS camera. The photoluminescence of proton irradiated LiF crystals and films shows an interesting linear response as a function of the irradiation fluence. By optical fluorescence microscopy, it was possible to record the transversal proton beam intensity profile by acquiring the photoluminescence image of irradiated LiF. Moreover, using cleaved LiF films grown on silicon substrates irradiated in a particular geometry allowed one to measure the colour centres photoluminescence distribution with proton penetration depth and provided a direct imaging of the Bragg peak. © 2014 AEIT.
Solid state detectors based on luminescent point defects in lithium fluoride for proton beam diagnostics
Montereali, R.M.;Libera, S.;Bonfigli, F.;Ronsivalle, C.;Picardi, L.;Ampollini, A.;Piccinini, M.
2014-01-01
Abstract
Proton beams of energy 3 and 7 MeV, produced by a linear accelerator for protontherapy under development at ENEA Frascati, were used to irradiate lithium fluoride (LiF) crystals and 1 μm thick LiF films grown by thermal evaporation on glass substrates, in a fluence range from 1011 to 1015 protons/cm2. The irradiation of LiF induced the stable formation of aggregate visible-emitting F2 and F 3 + color centers, which possess almost overlapping absorption bands around 450 nm and, under optical pumping in this spectral region, they simultaneously emit broad photoluminescence bands, peaked at 678 nm and 541 nm, respectively. Their laser excited emission spectra were acquired and the integrated photoluminescence signal was measured using a fluorescence optical microscope equipped with a cooled s-CMOS camera. The photoluminescence of proton irradiated LiF crystals and films shows an interesting linear response as a function of the irradiation fluence. By optical fluorescence microscopy, it was possible to record the transversal proton beam intensity profile by acquiring the photoluminescence image of irradiated LiF. Moreover, using cleaved LiF films grown on silicon substrates irradiated in a particular geometry allowed one to measure the colour centres photoluminescence distribution with proton penetration depth and provided a direct imaging of the Bragg peak. © 2014 AEIT.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
