After a brief description of the extreme ultraviolet (EUV) radiation peculiarities, the main characteristics of the ENEA Discharge Produced Plasma (DPP) EUV source are described. An efficient debris mitigation system has been developed and tested on the DPP source, to protect delicate objects from plasma emitted debris bombardment. The DPP source has been successfully utilized for pattern generation by EUV irradiation of photonic materials like lithium fluoride crystals and various innovative photoresists. A simple contact EUV lithography technique has been demonstrated to be effective for sub-micrometric resolution patterning on the above mentioned materials. Examples of obtained patterns are presented and discussed.

The ENEA discharge produced plasma EUV source: Description and applications

Torre, A.;Murra, D.;Flora, F.;Di Lazzaro, P.;Bollanti, S.;Mezi, L.
2016

Abstract

After a brief description of the extreme ultraviolet (EUV) radiation peculiarities, the main characteristics of the ENEA Discharge Produced Plasma (DPP) EUV source are described. An efficient debris mitigation system has been developed and tested on the DPP source, to protect delicate objects from plasma emitted debris bombardment. The DPP source has been successfully utilized for pattern generation by EUV irradiation of photonic materials like lithium fluoride crystals and various innovative photoresists. A simple contact EUV lithography technique has been demonstrated to be effective for sub-micrometric resolution patterning on the above mentioned materials. Examples of obtained patterns are presented and discussed.
Gas discharge devices;Luminescence;Plasma sources;Nano-patterning;X-ray lithography
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/5940
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