Al doped zinc oxide (ZnO:Al) is a transparent and conductive oxide used as contact and antireflection layer in solar cell based on Si or chalcogenide. Generally it is grown by magnetron sputtering but the resistivity of our films grown with this technique are still in the order of 10-3 Ωcm for layers grown at the temperatures used to produce the solar cells. The doping property of Hydrogen for Al:ZnO grown with two different sputtering techniques, DC magnetron sputtering and Pulsed magnetron sputtering at different growth parameters have been studied and the sample characterized optically, electrically and structurally. The best resistivity is 6.7∗10-4 Ωcm was obtained using Pulsed magnetron sputtering.

Effect of Hydrogen gas dilution on sputtered Al:ZnO film

Mittiga, A.;Salza, E.;Chierchia, R.
2014

Abstract

Al doped zinc oxide (ZnO:Al) is a transparent and conductive oxide used as contact and antireflection layer in solar cell based on Si or chalcogenide. Generally it is grown by magnetron sputtering but the resistivity of our films grown with this technique are still in the order of 10-3 Ωcm for layers grown at the temperatures used to produce the solar cells. The doping property of Hydrogen for Al:ZnO grown with two different sputtering techniques, DC magnetron sputtering and Pulsed magnetron sputtering at different growth parameters have been studied and the sample characterized optically, electrically and structurally. The best resistivity is 6.7∗10-4 Ωcm was obtained using Pulsed magnetron sputtering.
Pulsed magnetron sputtering;Al:ZnO;Solar cell;Hydrogen dilution
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/6023
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