We investigated the possible application of molybdenum oxide (MoOx) on the backside of p-type SHJ solar cells as substitute for the silicon-based back surface field layer. Solar cells with 4 cm2 area were fabricated on FZ c-Si(p) <100> wafers, passivated with ultrathin i-a-Si:H buffers. A nanocrystalline n-SiOx emitter was applied while on the backside we applied 20 nm-thick p-type a-Si:H or evaporated MoOx (10 nm). Symmetric samples were additionally prepared to compare the effects on wafer passivation of MoOx versus the more conventional p-a-Si:H layer. For flat devices we have observed a Voc increase of ∼40 mV with MoOx replacing p-a-Si:H, with fill factors ∼73% in both the cases. Globally an efficiency increase of 1% absolute has been achieved moving to the MoOx hole collector. The feasibility of the MoOx/Ag backside configuration has been demonstrated also for textured p-type SHJ solar cells, reaching so far an efficiency of 18.1%. © 2018 Author(s).

MoOx as hole-selective collector in p-type Si heterojunction solar cells

Lancellotti, L.;Bobeico, E.;Usatii, I.;Mercaldo, L.V.
2018

Abstract

We investigated the possible application of molybdenum oxide (MoOx) on the backside of p-type SHJ solar cells as substitute for the silicon-based back surface field layer. Solar cells with 4 cm2 area were fabricated on FZ c-Si(p) <100> wafers, passivated with ultrathin i-a-Si:H buffers. A nanocrystalline n-SiOx emitter was applied while on the backside we applied 20 nm-thick p-type a-Si:H or evaporated MoOx (10 nm). Symmetric samples were additionally prepared to compare the effects on wafer passivation of MoOx versus the more conventional p-a-Si:H layer. For flat devices we have observed a Voc increase of ∼40 mV with MoOx replacing p-a-Si:H, with fill factors ∼73% in both the cases. Globally an efficiency increase of 1% absolute has been achieved moving to the MoOx hole collector. The feasibility of the MoOx/Ag backside configuration has been demonstrated also for textured p-type SHJ solar cells, reaching so far an efficiency of 18.1%. © 2018 Author(s).
9780735417151
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/6099
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