We solve minority-carrier transport exactly by assuming a new lifetime model based on free-carrier Auger lifetime and constant diffusivity,DA, at high dopings. A new exact expression for saturation current density is derived, which fits measured data in reported sets of metal-coatedn and p emitters at DA-value consistent with diffusivity data at high dopings. The lifetime model is shown to be consistent with lifetime data. © 2018 IEEE.

Auger Transport of Noninteracting Carriers

Izzi, M.;Abenante, L
2018

Abstract

We solve minority-carrier transport exactly by assuming a new lifetime model based on free-carrier Auger lifetime and constant diffusivity,DA, at high dopings. A new exact expression for saturation current density is derived, which fits measured data in reported sets of metal-coatedn and p emitters at DA-value consistent with diffusivity data at high dopings. The lifetime model is shown to be consistent with lifetime data. © 2018 IEEE.
9781538685297
silicon;diffusivity equation;saturation current;Auger lifetime
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/6155
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