The amorphous/crystalline silicon technology has demonstrated its potentiality leading to high efficiency solar cells. We propose the use of surface photovoltage technique as a contact-less tool for the evaluation of the energetic distribution of the state density at amorphous/crystalline silicon interface. We investigate the effect hydrogen plasma treatments performed on thin amorphous silicon buffer layer deposited over crystalline silicon surface and we compare its effect with that of thermal annealing on the interface. The surface photovoltage technique results to be very sensitive to the different experimental treatments, and therefore it can be considered a precious tool to monitor and improve the interface electronic quality. © 2013 SPIE.

Surface photovoltage as a tool to monitor the effect of hydrogen treatment on a-Si:H/c-Si heterojunction

Serenelli, L.
2013

Abstract

The amorphous/crystalline silicon technology has demonstrated its potentiality leading to high efficiency solar cells. We propose the use of surface photovoltage technique as a contact-less tool for the evaluation of the energetic distribution of the state density at amorphous/crystalline silicon interface. We investigate the effect hydrogen plasma treatments performed on thin amorphous silicon buffer layer deposited over crystalline silicon surface and we compare its effect with that of thermal annealing on the interface. The surface photovoltage technique results to be very sensitive to the different experimental treatments, and therefore it can be considered a precious tool to monitor and improve the interface electronic quality. © 2013 SPIE.
9780819496737
Surface photovoltage;Defect density;A-Si:H/c-Si heterojunction
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/6162
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