In order to optimize the optoelectronic properties of novel solar cell architectures, such as the crystalline-amorphous interface in Silicon heterojunction (c-Si/a-Si:H) devices, an analysis of the local microscopic structure at the interface is essential. To this aim, reliable physical models for c-Si and a-Si:H were developed.

Ab-initio study of silicon based materials for photovoltaic applications

Celino, Massimo;Gusso, Michele;Giusepponi, Simone
2016-11

Abstract

In order to optimize the optoelectronic properties of novel solar cell architectures, such as the crystalline-amorphous interface in Silicon heterojunction (c-Si/a-Si:H) devices, an analysis of the local microscopic structure at the interface is essential. To this aim, reliable physical models for c-Si and a-Si:H were developed.
978-88-8286-342-5
Amorphous silicon;Optical properties;Electronic structure;Molecular dynamics
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/6288
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