A study was conducted on the positron-electron autocorrelation function of defect center in silicon. The positron annihilation lifetime spectroscopy (PALS) spectra taken on the as-grown and defected samples of silicon were studied. It was found that the positron binding energy to the defect could be estimated from the ratio of the positron-electron autocorrelates for bulk crystal and defect trapped positron states.
|Titolo:||Positron-electron autocorrelation function study of E-center in silicon|
|Data di pubblicazione:||1-nov-2003|
|Appare nelle tipologie:||1.1 Articolo in rivista|