A study was conducted on the positron-electron autocorrelation function of defect center in silicon. The positron annihilation lifetime spectroscopy (PALS) spectra taken on the as-grown and defected samples of silicon were studied. It was found that the positron binding energy to the defect could be estimated from the ratio of the positron-electron autocorrelates for bulk crystal and defect trapped positron states.
Positron-electron autocorrelation function study of E-center in silicon
Ferro, G.;
2003-11-01
Abstract
A study was conducted on the positron-electron autocorrelation function of defect center in silicon. The positron annihilation lifetime spectroscopy (PALS) spectra taken on the as-grown and defected samples of silicon were studied. It was found that the positron binding energy to the defect could be estimated from the ratio of the positron-electron autocorrelates for bulk crystal and defect trapped positron states.File in questo prodotto:
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