We show the superior performance in terms of light management of n-doped mixed phase silicon oxide in direct contact with Ag with respect to the established ZnO/Ag back reflector in thin film Si tandem solar cells on randomly textured substrates. Based on coexisting larger quantum efficiency and amplification of the optical Raman mode of Si, we propose that, in spite of a simple cell design, near-field concentrated light radiated at metal nanoprotrusions on the back interface is harvested. The effect is a remarkable 10% increase of the generated current density in the bottom cell, holding promise for significant conversion efficiency gain in matched devices. © 2013 Elsevier B.V.

Broadband near-field effects for improved thin film Si solar cells on randomly textured substrates

Polichetti, T.;Usatii, I.;Delli Veneri, P.;Mercaldo, L.V.
2013

Abstract

We show the superior performance in terms of light management of n-doped mixed phase silicon oxide in direct contact with Ag with respect to the established ZnO/Ag back reflector in thin film Si tandem solar cells on randomly textured substrates. Based on coexisting larger quantum efficiency and amplification of the optical Raman mode of Si, we propose that, in spite of a simple cell design, near-field concentrated light radiated at metal nanoprotrusions on the back interface is harvested. The effect is a remarkable 10% increase of the generated current density in the bottom cell, holding promise for significant conversion efficiency gain in matched devices. © 2013 Elsevier B.V.
Near-field effects;Silicon oxide n-layer;Thin film solar cells;Back-reflector;a-Si:H/μc-Si:H tandem cells
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/1253
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