Polycrystalline MoS2 grown by Mo sulphurization was exposed to increasing doses of Ar+ ions at 250 eV starting from 2.2 × 1015 ions/cm2 to 3.92 × 1017 ions/cm2. Electronic structure changes were monitored by X-Ray Photoelectron Spectroscopy (XPS) and Inverse Photolectron Spectroscopy (IPES). No change in the Fermi level position was observed with Ar+ dosing. Ion bombardment resulted in a new visible feature at lower binding energy in the Mo3d core level, while the S2p lineshape showed little changes. The formation of a steady state from 2.49 × 1017 ions/cm2 has been detected. The investigation of the occupied and unoccupied states on the steady-state surface pointed to the simultaneous presence of metallic-like Mo with amorphous MoS2-x. © 2016 Elsevier B.V.

Electronic structure of Ar+ ion-sputtered thin-film MoS2: A XPS and IPES study

Mittiga, A.;Valentini, M.;Malerba, C.;Rondino, F.;Santoni, A.
2017

Abstract

Polycrystalline MoS2 grown by Mo sulphurization was exposed to increasing doses of Ar+ ions at 250 eV starting from 2.2 × 1015 ions/cm2 to 3.92 × 1017 ions/cm2. Electronic structure changes were monitored by X-Ray Photoelectron Spectroscopy (XPS) and Inverse Photolectron Spectroscopy (IPES). No change in the Fermi level position was observed with Ar+ dosing. Ion bombardment resulted in a new visible feature at lower binding energy in the Mo3d core level, while the S2p lineshape showed little changes. The formation of a steady state from 2.49 × 1017 ions/cm2 has been detected. The investigation of the occupied and unoccupied states on the steady-state surface pointed to the simultaneous presence of metallic-like Mo with amorphous MoS2-x. © 2016 Elsevier B.V.
Ar+ ion sputtering;Inverse photoemission;CZTS;XPS;MoS2;Sulphurization
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/1372
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