In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenty-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium with a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2 × 109 neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, such as dark current and charge spectra, has been observed. An extensive comparison of the performances of all the tested devices will be presented. © 2014 IOP Publishing Ltd and Sissa Medialab srl.

Study of the radiation damage of Silicon Photo-Multipliers at the GELINA facility

Pietropaolo, A.
2014

Abstract

In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenty-six devices, produced by AdvanSiD, Hamamatsu and SensL, have been irradiated at the Geel Electron LINear Accelerator (GELINA) in Belgium with a nearly white neutron beam. The total 1 MeV equivalent integrated dose was 6.2 × 109 neq/cm2. Photodetector performances have been measured during the whole irradiation period and a gradual worsening of the detector properties, such as dark current and charge spectra, has been observed. An extensive comparison of the performances of all the tested devices will be presented. © 2014 IOP Publishing Ltd and Sissa Medialab srl.
Photon detectors for UV, visible and IR photons (solid-state) (PIN diodes, APDs, Si-PMTs, G-APDs, CCDs, EBCCDs, EMCCDs etc);Radiation damage to detector materials (solid state)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/2159
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