In this work we propose to replace the emitter layer of the n-type doped a-Si:H/p-type doped crystalline silicon heterojunction solar cell, with an n-type doped SiO x amorphous oxide layer. The n-type doped SiO x :H shows a lower activation energy and higher carrier mobility value with respect to the n-type doped a-Si:H. Moreover, higher transmission, below 500 nm of wavelength, and higher conductivity are measured. The relevance of transparency of the (n) a-SiO x :H has been studied using that film in solar cells. The electrical parameters revealed a solar cell efficiency of 15.8 %. Moreover, the effect of TCO as a front side cell electrode is considered and discussed on the base of its workfunction when applied on top of the n-type doped SiO x emitter layer using also numerical simulations. © 2013 Springer-Verlag Berlin Heidelberg.

Doped SiO x emitter layer in amorphous/crystalline silicon heterojunction solar cell

Delli Veneri, P.;Mercaldo, L.V.;Esposito, E.;Usatii, I.;Della Noce, M.;Mangiapane, P.;Serenelli, L.;Tucci, M.;Izzi, M.
2014

Abstract

In this work we propose to replace the emitter layer of the n-type doped a-Si:H/p-type doped crystalline silicon heterojunction solar cell, with an n-type doped SiO x amorphous oxide layer. The n-type doped SiO x :H shows a lower activation energy and higher carrier mobility value with respect to the n-type doped a-Si:H. Moreover, higher transmission, below 500 nm of wavelength, and higher conductivity are measured. The relevance of transparency of the (n) a-SiO x :H has been studied using that film in solar cells. The electrical parameters revealed a solar cell efficiency of 15.8 %. Moreover, the effect of TCO as a front side cell electrode is considered and discussed on the base of its workfunction when applied on top of the n-type doped SiO x emitter layer using also numerical simulations. © 2013 Springer-Verlag Berlin Heidelberg.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/2430
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