Among the transparent conductor, one of themost interesting is the Al doped MgxZn1-xO films for their electrical properties that make it very attracting for solar cell application. In thiswork, the Mg distribution in Al doped MgxZn1-xO films was investigated in order to find a reliable methods to determine Mg distribution. In particular, X-ray diffraction, Auger electron spectroscopy and time of flight secondary ion mass spectrometry were used to characterize the film. Time of flight secondary ion mass spectrometry MCs+ results appear to be the most promising analytical technique.

Determination of Mg concentration and distribution in MgxZn1-xO films for photonic devices application

Tapfer, L.
2014

Abstract

Among the transparent conductor, one of themost interesting is the Al doped MgxZn1-xO films for their electrical properties that make it very attracting for solar cell application. In thiswork, the Mg distribution in Al doped MgxZn1-xO films was investigated in order to find a reliable methods to determine Mg distribution. In particular, X-ray diffraction, Auger electron spectroscopy and time of flight secondary ion mass spectrometry were used to characterize the film. Time of flight secondary ion mass spectrometry MCs+ results appear to be the most promising analytical technique.
MgxZn1-xO;XRD;Auger;ToF-SIMS
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/2443
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