To date, solid-state pressureless sintering of silicon carbide powder requires sintering aids and high sintering temperature (>2100. ᄚC) in order to achieve high sintered density (>95% T.D.). Two-step sintering (TSS) method can allow to set sintering temperature lower than that conventionally required. So, pressureless two-step sintering process was successfully applied for solid-state sintering (boron carbide and carbon as sintering additives) of commercial SiC powder at 1980. ᄚC. Microstructure and mechanical properties of TSS-SiC were evaluated and compared to those obtained with the conventional sintering (SSiC) process performed at 2130. ᄚC. TSS-SiC showed finer microstructure and higher flexural strength than SSiC with very similar density (98.4% T.D. for TSS-SiC and 98.6% T.D. for SSiC). ᄅ 2014 Elsevier Ltd.

Solid-state pressureless sintering of silicon carbide below 2000ᄚC

Fabbri, P.;Sico, G.;Magnani, G.
2014

Abstract

To date, solid-state pressureless sintering of silicon carbide powder requires sintering aids and high sintering temperature (>2100. ᄚC) in order to achieve high sintered density (>95% T.D.). Two-step sintering (TSS) method can allow to set sintering temperature lower than that conventionally required. So, pressureless two-step sintering process was successfully applied for solid-state sintering (boron carbide and carbon as sintering additives) of commercial SiC powder at 1980. ᄚC. Microstructure and mechanical properties of TSS-SiC were evaluated and compared to those obtained with the conventional sintering (SSiC) process performed at 2130. ᄚC. TSS-SiC showed finer microstructure and higher flexural strength than SSiC with very similar density (98.4% T.D. for TSS-SiC and 98.6% T.D. for SSiC). ᄅ 2014 Elsevier Ltd.
Microstructure;Mechanical properties;Ceramics;Silicon carbide;Sintering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/2556
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