To date, solid-state pressureless sintering of silicon carbide powder requires sintering aids and high sintering temperature (>2100. ﾰC) in order to achieve high sintered density (>95% T.D.). Two-step sintering (TSS) method can allow to set sintering temperature lower than that conventionally required. So, pressureless two-step sintering process was successfully applied for solid-state sintering (boron carbide and carbon as sintering additives) of commercial SiC powder at 1980. ﾰC. Microstructure and mechanical properties of TSS-SiC were evaluated and compared to those obtained with the conventional sintering (SSiC) process performed at 2130. ﾰC. TSS-SiC showed finer microstructure and higher flexural strength than SSiC with very similar density (98.4% T.D. for TSS-SiC and 98.6% T.D. for SSiC). ﾩ 2014 Elsevier Ltd.
|Titolo:||Solid-state pressureless sintering of silicon carbide below 2000ﾰC|
|Data di pubblicazione:||2014|
|Appare nelle tipologie:||1.1 Articolo in rivista|