A general analytical solution to one-dimensional minority-carrier transport under illumination in uniformly doped light-trapping (LT) Si solar cells in low-level injection is presented, which is valid for any constant value of propagation angle of internal light, θ. This solution individuates an exact relationship between devices where θ = 0° and devices where θ > 0°. This relationship allows checking the new solution numerically. The numerical check is performed successfully at standard Lambertian optics (θ = 60°) by calculating light-generated currents in a set of Si solar cells. © 2016 Elsevier Ltd.

General analytical solution to minority-carrier transport in uniformly-doped light-trapping Si solar cells

Abenante, L.
2016

Abstract

A general analytical solution to one-dimensional minority-carrier transport under illumination in uniformly doped light-trapping (LT) Si solar cells in low-level injection is presented, which is valid for any constant value of propagation angle of internal light, θ. This solution individuates an exact relationship between devices where θ = 0° and devices where θ > 0°. This relationship allows checking the new solution numerically. The numerical check is performed successfully at standard Lambertian optics (θ = 60°) by calculating light-generated currents in a set of Si solar cells. © 2016 Elsevier Ltd.
Simulation;Light trapping;Modeling;Silicon;Solar cells
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/2596
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