The charge transport in zinc-oxide piezosemiconductive nanowires under purely vertical compressive or tensile strains is investigated. For simplicity, only the additional band bending originated by the piezoelectric charges has been accounted for. Moreover, a constant volumetric piezoelectric charge density is assumed, distributed within a maximum distance δpiezo from the two junctions between the metal ends and the nanowire. Examples demonstrate that the carrier concentration, the energy conduction band profile, and the current-voltage characteristics significantly depend on δpiezo. Therefore, we propose the use of current-voltage measurements to obtain information on δpiezo in strained piezosemiconductors. © 2002-2012 IEEE.

Current-voltage characteristics of ZnO nanowires under uniaxial loading

Rinaldi, A.
2014

Abstract

The charge transport in zinc-oxide piezosemiconductive nanowires under purely vertical compressive or tensile strains is investigated. For simplicity, only the additional band bending originated by the piezoelectric charges has been accounted for. Moreover, a constant volumetric piezoelectric charge density is assumed, distributed within a maximum distance δpiezo from the two junctions between the metal ends and the nanowire. Examples demonstrate that the carrier concentration, the energy conduction band profile, and the current-voltage characteristics significantly depend on δpiezo. Therefore, we propose the use of current-voltage measurements to obtain information on δpiezo in strained piezosemiconductors. © 2002-2012 IEEE.
piezoelectricity;semiconducting materials;nanowire (NW);Current-voltage (I-V) characteristic;zinc-oxide
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/2763
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