The charge transport in zinc-oxide piezosemiconductive nanowires under purely vertical compressive or tensile strains is investigated. For simplicity, only the additional band bending originated by the piezoelectric charges has been accounted for. Moreover, a constant volumetric piezoelectric charge density is assumed, distributed within a maximum distance δpiezo from the two junctions between the metal ends and the nanowire. Examples demonstrate that the carrier concentration, the energy conduction band profile, and the current-voltage characteristics significantly depend on δpiezo. Therefore, we propose the use of current-voltage measurements to obtain information on δpiezo in strained piezosemiconductors. © 2002-2012 IEEE.
Current-voltage characteristics of ZnO nanowires under uniaxial loading
Rinaldi, A.
2014-01-01
Abstract
The charge transport in zinc-oxide piezosemiconductive nanowires under purely vertical compressive or tensile strains is investigated. For simplicity, only the additional band bending originated by the piezoelectric charges has been accounted for. Moreover, a constant volumetric piezoelectric charge density is assumed, distributed within a maximum distance δpiezo from the two junctions between the metal ends and the nanowire. Examples demonstrate that the carrier concentration, the energy conduction band profile, and the current-voltage characteristics significantly depend on δpiezo. Therefore, we propose the use of current-voltage measurements to obtain information on δpiezo in strained piezosemiconductors. © 2002-2012 IEEE.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
