In this work we studied the influence of the annealing treatments of a sol-gel derived ZnO electron transport layer deposited on ITO substrate, on the performances of inverted bulk heterojunction polymer solar cells using a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b;4,5-b′]dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiopene)-2,6-diyl] and [6,6]-phenyl C71 butyric acid methyl ester. Since the annealing treatments needed to complete the formation of the solution-processed ZnO film can modify the underlying ITO electrode, we analyzed the performance of the fabricated cells in terms of the properties of ITO and ZnO films. We found a linear relationship between the sheet resistance of the ITO layer and the series resistance of the corresponding device, which strongly influences the fill factor. The best power conversion efficiency (7%) under simulated AM 1.5G illumination of 100 mW/cm2 was achieved for the polymer solar cell fabricated using a ZnO film annealed at 150 °C for only 5 min. Higher annealing temperatures and times increase the sheet resistance of the ITO worsening the device performances. © 2015 Elsevier B.V. All ights reserved.

Influence of annealing treatments on solution-processed ZnO film deposited on ITO substrate as electron transport layer for inverted polymer solar cells

Minarini, C.;Ricciardi, R.;Bobeico, E.;Diana, R.;Morvillo, P.;
2015

Abstract

In this work we studied the influence of the annealing treatments of a sol-gel derived ZnO electron transport layer deposited on ITO substrate, on the performances of inverted bulk heterojunction polymer solar cells using a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b;4,5-b′]dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiopene)-2,6-diyl] and [6,6]-phenyl C71 butyric acid methyl ester. Since the annealing treatments needed to complete the formation of the solution-processed ZnO film can modify the underlying ITO electrode, we analyzed the performance of the fabricated cells in terms of the properties of ITO and ZnO films. We found a linear relationship between the sheet resistance of the ITO layer and the series resistance of the corresponding device, which strongly influences the fill factor. The best power conversion efficiency (7%) under simulated AM 1.5G illumination of 100 mW/cm2 was achieved for the polymer solar cell fabricated using a ZnO film annealed at 150 °C for only 5 min. Higher annealing temperatures and times increase the sheet resistance of the ITO worsening the device performances. © 2015 Elsevier B.V. All ights reserved.
Inverted architecture;ZnO;Polymer solar cells;Photovoltaic;Sol-gel
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/3158
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