In the last few years, the peculiar photoluminescence properties of radiation-induced color centers in lithium fluoride (LiF) films have been successfully used for advanced diagnostics of low-energy proton beams produced by the TOP-IMPLART linear accelerator for protontheraphy under development at ENEA C.R. Frascati. The two-dimensional spatial dose map of the transversal section of proton beams was fully reconstructed in a wide interval of doses. In this work the optical emission properties of LiF thin films, grown by thermal evaporation on glass and Si(100) substrates and subsequently irradiated by proton beams of nominal energy 3 MeV at doses higher than 105 Gy, were carefully investigated. Their structural and morphological analyses were performed by X-ray diffraction and atomic force microscopy. A careful comparison of the photoluminescence and photoluminescence-excitation spectra of F2 and F3 + electronic defects was performed. Substrate-enhanced photoluminescence intensity increase up to 100% was observed in colored LiF films grown on Si substrates with respect to glass ones. This behavior can be substantially ascribed to the reflective properties of the Si substrate at the emission wavelengths of F2 and F3 + CCs, although other complex effects due to the polycrystalline nature of the films cannot be excluded. © 2018
Optical investigation of radiation-induced color centers in lithium fluoride thin films for low-energy proton-beam detectors
Montereali, R.M.;Rufoloni, A.;Mancini, A.;Ronsivalle, C.;Picardi, L.;Ampollini, A.;Piccinini, M.;Nichelatti, E.;Libera, S.;Bonfigli, F.;Vincenti, M.A.
2019-01-01
Abstract
In the last few years, the peculiar photoluminescence properties of radiation-induced color centers in lithium fluoride (LiF) films have been successfully used for advanced diagnostics of low-energy proton beams produced by the TOP-IMPLART linear accelerator for protontheraphy under development at ENEA C.R. Frascati. The two-dimensional spatial dose map of the transversal section of proton beams was fully reconstructed in a wide interval of doses. In this work the optical emission properties of LiF thin films, grown by thermal evaporation on glass and Si(100) substrates and subsequently irradiated by proton beams of nominal energy 3 MeV at doses higher than 105 Gy, were carefully investigated. Their structural and morphological analyses were performed by X-ray diffraction and atomic force microscopy. A careful comparison of the photoluminescence and photoluminescence-excitation spectra of F2 and F3 + electronic defects was performed. Substrate-enhanced photoluminescence intensity increase up to 100% was observed in colored LiF films grown on Si substrates with respect to glass ones. This behavior can be substantially ascribed to the reflective properties of the Si substrate at the emission wavelengths of F2 and F3 + CCs, although other complex effects due to the polycrystalline nature of the films cannot be excluded. © 2018I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
