Cu2ZnSnS4 (CZTS) nanocrystals in oleylamine (OLA) and 1-dodecanethiol (1-DDT) solvents were successfully prepared via hot-injection method, to produce inks for the deposition of absorber layers in photovoltaic cells. In this process, 1-DDT acts as a coordinating ligand to control the nucleation and growth of CZTS nanocrystals, whereas lower amounts of OLA promote a homogeneous growth of the grains in the absorber layer. X-Ray Diffraction (XRD) revealed both tetragonal and hexagonal phases of CTZS in films obtained after soft thermal treatments (labeled TT0). In particular, 1-DDT is responsible for the formation of a greater percentage of the hexagonal phase (ZnS-wurtzite type) than that formed when only OLA is used. The thermal treatments have been varied from 500 °C to 600 °C for improving crystallization and eliminating secondary phases. Both features are known to promote CZTS thin films with band gap values typical of CZTS (1.5-1.6 eV) and suitable resistivity. This study let to compare also the CZTS post-annealing without (TT1) and with sulfur vapor (TT2) in a tubular furnace. Only tetragonal CZTS phase is observed in the XRD pattern of CZTS thin films after TT2. A small presence of localized residues of secondary phases on the same samples was revealed by μRaman measurements. The best values of band gap (1.50 eV) and resistivity (1.05 ohm.cm) were obtained after thermal treatment at 500 °C, which is suitable for absorber layer in photovoltaic application.
Synthesis and post-annealing of Cu2ZnSnS4 absorber layers based on Oleylamine/1-dodecanethiol
Malerba C.;
2019-01-01
Abstract
Cu2ZnSnS4 (CZTS) nanocrystals in oleylamine (OLA) and 1-dodecanethiol (1-DDT) solvents were successfully prepared via hot-injection method, to produce inks for the deposition of absorber layers in photovoltaic cells. In this process, 1-DDT acts as a coordinating ligand to control the nucleation and growth of CZTS nanocrystals, whereas lower amounts of OLA promote a homogeneous growth of the grains in the absorber layer. X-Ray Diffraction (XRD) revealed both tetragonal and hexagonal phases of CTZS in films obtained after soft thermal treatments (labeled TT0). In particular, 1-DDT is responsible for the formation of a greater percentage of the hexagonal phase (ZnS-wurtzite type) than that formed when only OLA is used. The thermal treatments have been varied from 500 °C to 600 °C for improving crystallization and eliminating secondary phases. Both features are known to promote CZTS thin films with band gap values typical of CZTS (1.5-1.6 eV) and suitable resistivity. This study let to compare also the CZTS post-annealing without (TT1) and with sulfur vapor (TT2) in a tubular furnace. Only tetragonal CZTS phase is observed in the XRD pattern of CZTS thin films after TT2. A small presence of localized residues of secondary phases on the same samples was revealed by μRaman measurements. The best values of band gap (1.50 eV) and resistivity (1.05 ohm.cm) were obtained after thermal treatment at 500 °C, which is suitable for absorber layer in photovoltaic application.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
