Schottky-barrier solar cells (SBSCs) represent low-cost candidates for photovoltaics applications. The engineering of the interface between absorber and front electrode is crucial for reducing the dark current, blocking the majority carriers injected into the electrode, and reducing surface recombination. The presence of tailored interfacial layers between the metal electrode and the semiconductor absorber can improve the cell performance. In this work, the interface of a graphene/n-type Si SBSC by introducing a graphene-based derivative (GBD) layer meant to reduce the Schottky-barrier height (SBH) and ease the charge collection are engineered. The chemical vapor deposition (CVD) parameters are tuned to obtain the two graphene films with different structure and electrical properties: few-layer graphene (FLG) working as transparent conductive electrode and GBD layer with electron-blocking and hole-transporting properties. Test SBSCs are fabricated to evaluate the effect of the introduction of GBD as interlayer into the FLG/n-Si junction. The GBD layer reduces the recombination at the interface between graphene and n-Si, and improves the external quantum efficiency (EQE) with optical bias from 50 to 60%. The FLG/GBD/n-Si cell attains a power conversion efficiency (PCE) of ≈5%, which increase to 6.7% after a doping treatment by nitric acid vapor.
The Role of Graphene-Based Derivative as Interfacial Layer in Graphene/n-Si Schottky Barrier Solar Cells
Lancellotti L.;Messina G.;Bobeico E.;Delli Veneri P.;Dikonimos T.;Lisi N.
2019-01-01
Abstract
Schottky-barrier solar cells (SBSCs) represent low-cost candidates for photovoltaics applications. The engineering of the interface between absorber and front electrode is crucial for reducing the dark current, blocking the majority carriers injected into the electrode, and reducing surface recombination. The presence of tailored interfacial layers between the metal electrode and the semiconductor absorber can improve the cell performance. In this work, the interface of a graphene/n-type Si SBSC by introducing a graphene-based derivative (GBD) layer meant to reduce the Schottky-barrier height (SBH) and ease the charge collection are engineered. The chemical vapor deposition (CVD) parameters are tuned to obtain the two graphene films with different structure and electrical properties: few-layer graphene (FLG) working as transparent conductive electrode and GBD layer with electron-blocking and hole-transporting properties. Test SBSCs are fabricated to evaluate the effect of the introduction of GBD as interlayer into the FLG/n-Si junction. The GBD layer reduces the recombination at the interface between graphene and n-Si, and improves the external quantum efficiency (EQE) with optical bias from 50 to 60%. The FLG/GBD/n-Si cell attains a power conversion efficiency (PCE) of ≈5%, which increase to 6.7% after a doping treatment by nitric acid vapor.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
