A low-temperature sol-gel Ga-doped ZnO (ZnO:Ga) thin film as the electron transport layer (ETL) for high efficiency inverted polymer solar cells (PSCs) has been realised. The ZnO:Ga precursor was prepared by dissolving zinc acetate and ethanolamine in the 2-methoxyethanol with Ga(NO3)3 at different concentration. Doped ZnO thin films were deposed on indium tin oxide (ITO)/glass substrates by spin-coating technique and the films annealed at 150°C for 5 minutes in air. To check performances of ZnO:Ga thin film were realized inverted polymer solar cells with the configuration ITO/ZnO:Ga/photoactive layer/MoO3/Ag. The photoactive layer was a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2,6-diyl-alt-(4-(2-octanoyl)-3-fluorothieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-CF) and [6,6]-phenyl C71 butyric acid methyl ester ([70]PCBM) (1:1.5 w/w). In this work was investigated the effect of gallium concentration on the photovoltaic behavior of PSCs. The best efficiency of 7.7% was reached by using a 6 at% ZnO:Ga film as ETL.

A comparative study on low-temperature sol-gel ga-doped zinc oxide inverted PSCs

Morvillo P.;Bobeico E.;
2019

Abstract

A low-temperature sol-gel Ga-doped ZnO (ZnO:Ga) thin film as the electron transport layer (ETL) for high efficiency inverted polymer solar cells (PSCs) has been realised. The ZnO:Ga precursor was prepared by dissolving zinc acetate and ethanolamine in the 2-methoxyethanol with Ga(NO3)3 at different concentration. Doped ZnO thin films were deposed on indium tin oxide (ITO)/glass substrates by spin-coating technique and the films annealed at 150°C for 5 minutes in air. To check performances of ZnO:Ga thin film were realized inverted polymer solar cells with the configuration ITO/ZnO:Ga/photoactive layer/MoO3/Ag. The photoactive layer was a blend of poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b′)dithiophene)-2,6-diyl-alt-(4-(2-octanoyl)-3-fluorothieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-CF) and [6,6]-phenyl C71 butyric acid methyl ester ([70]PCBM) (1:1.5 w/w). In this work was investigated the effect of gallium concentration on the photovoltaic behavior of PSCs. The best efficiency of 7.7% was reached by using a 6 at% ZnO:Ga film as ETL.
Gallium doped zinc oxide (ZnO:Ga); Polymer solar cells; Sol-gel.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/53445
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