In this work we propose the use of a plasma dry etching technique to condition the morphology of a silicon surface. The low environmental impacted NF3 halogen compound is adopted together with Ar to perform a multi-step process which helps to enhance the silicon surface texturing, thus reducing the time needed for the whole dry etching procedure, which also include saw damage removal on silicon wafers. A detailed study of surface reflectance and etching rate as a function of the dry plasma process parameters is discussed to achieve suitable multi-crystalline silicon surfaces for photovoltaic applications. © 2013 Elsevier B.V.

Highly textured multi-crystalline silicon surface obtained by dry etching multi-step process

Tucci, M.;Salza, E.;Izzi, M.;Serenelli, L.;
2013

Abstract

In this work we propose the use of a plasma dry etching technique to condition the morphology of a silicon surface. The low environmental impacted NF3 halogen compound is adopted together with Ar to perform a multi-step process which helps to enhance the silicon surface texturing, thus reducing the time needed for the whole dry etching procedure, which also include saw damage removal on silicon wafers. A detailed study of surface reflectance and etching rate as a function of the dry plasma process parameters is discussed to achieve suitable multi-crystalline silicon surfaces for photovoltaic applications. © 2013 Elsevier B.V.
Reflectance;Dry etching;Multi-crystalline silicon;Texture
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/597
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