We focus on the use of mixed-phase phosphorus-doped SiOx (n-SiOx) as advanced n-layer in both the junctions of micromorph tandem solar cells. The material, deposited by plasma enhanced chemical vapor deposition at two pressure values, has been fully characterized. Direct evidence of phase separation into nanocrystalline Si and amorphous oxygen-rich phases is reported, accompanied by information on the optical properties of the material as a whole and the two phases, as gathered by spectroscopic ellispometry. The multifunctional role of the n-SiOx layer, providing for beneficial optical effects at both the intermediate and back reflecting stage in micromorph solar cells, is established. In particular superior performance (improved fill factor and enhanced bottom solar cell spectral response) is demonstrated with use at the rear side of the device in combination with a simple Ag back reflector, with respect to the standard device employing the conventional ZnO/Ag reflector. © 2013 Elsevier B.V. All rights reserved.

Properties of mixed phase n-doped silicon oxide layers and application in micromorph solar cells

Usatii, I.;Delli Veneri, P.;Mercaldo, L.V.
2013

Abstract

We focus on the use of mixed-phase phosphorus-doped SiOx (n-SiOx) as advanced n-layer in both the junctions of micromorph tandem solar cells. The material, deposited by plasma enhanced chemical vapor deposition at two pressure values, has been fully characterized. Direct evidence of phase separation into nanocrystalline Si and amorphous oxygen-rich phases is reported, accompanied by information on the optical properties of the material as a whole and the two phases, as gathered by spectroscopic ellispometry. The multifunctional role of the n-SiOx layer, providing for beneficial optical effects at both the intermediate and back reflecting stage in micromorph solar cells, is established. In particular superior performance (improved fill factor and enhanced bottom solar cell spectral response) is demonstrated with use at the rear side of the device in combination with a simple Ag back reflector, with respect to the standard device employing the conventional ZnO/Ag reflector. © 2013 Elsevier B.V. All rights reserved.
Silicon oxide n-layer;Silicon nanocrystals;Intermediate reflector;Back-reflector;Keywords a-Si/μc-Si tandem cells
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/605
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
social impact