The need to develop new energy storage technology has led to deeper investigation into materials science to produce highly efficient batteries, primarily the lithium ion battery. The importance of electrodes in such devices has led to the reemergence of silicon nanowires (Si NWs) at the forefront of materials study—in this context, as an energy storage material (as electrodes). Redox potential and work function play the most important roles in charge transfer, the battery charging/discharging process. Thus, the NWs’ interfacial properties become important in achieving higher stability and efficiency. In this work, a deep study was conducted using equilibrium perturbation to change the surface electronic properties of Si NWs, which can be integrated into various technologies, while simultaneously achieving an interesting interface that is chemically passive and cheap to produce. By using an X-ray photoelectron spectroscope, a Kelvin probe, and contact angle measurement, combined with theoretical analysis, a full picture is achieved regarding the Si NWs’ interface, paving the way for this new technique to develop unique interfaces and to achieve a higher energy capacity and a longer lifetime.

Enhancing the electronic properties of VLS-grown silicon nanowires by surface charge transfer

Buonocore F.;Celino M.;
2022-01-01

Abstract

The need to develop new energy storage technology has led to deeper investigation into materials science to produce highly efficient batteries, primarily the lithium ion battery. The importance of electrodes in such devices has led to the reemergence of silicon nanowires (Si NWs) at the forefront of materials study—in this context, as an energy storage material (as electrodes). Redox potential and work function play the most important roles in charge transfer, the battery charging/discharging process. Thus, the NWs’ interfacial properties become important in achieving higher stability and efficiency. In this work, a deep study was conducted using equilibrium perturbation to change the surface electronic properties of Si NWs, which can be integrated into various technologies, while simultaneously achieving an interesting interface that is chemically passive and cheap to produce. By using an X-ray photoelectron spectroscope, a Kelvin probe, and contact angle measurement, combined with theoretical analysis, a full picture is achieved regarding the Si NWs’ interface, paving the way for this new technique to develop unique interfaces and to achieve a higher energy capacity and a longer lifetime.
2022
Charge transfer
DFT
Non-equilibrium reactions
Silicon nanowire
Sub-oxides
Surface chemistry
Surface Fermi level
Work function
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/67149
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
social impact