After a brief introduction, including a summing up of the main characteristics of the Extreme Ultraviolet (EUV) radiation, we describe the ENEA Discharge Produced Plasma (DPP) EUV source. The DPP emits 100-ns duration EUV pulses, in the λ = 10-18 nm wavelength spectral range. The in-band energy per pulse is about 30 mJ/sr at 10 Hz repetition rate. In addition to the already performed characterizations, we recently exploited high purity monocrystalline diamond detectors developed at the Department of Industrial Engineering of the University of Rome “Tor Vergata”. The configuration of the electrodes of the used devices was the interdigitated one, particularly suitable for fast measurements. Thanks to the rapid temporal response of these detectors, the fast peaks of EUV emission (7-8 ns FWHM), superimposed on the main pulses, have been characterized much better than when using silicon PIN diodes. These rapid emission peaks occur at the maximum heating and radial compression of the plasma column. Finally, by using the DPP source, a useful characterization and calibration of the diamond detectors has been obtained in the λ = 10-18 nm range, by comparison with a reference absolute PIN diode.
Characterization of the ENEA extreme ultraviolet radiation discharge produced plasma source, by using diamond detectors developed at the University of Rome “Tor Vergata”
Mezi L.
2022-01-01
Abstract
After a brief introduction, including a summing up of the main characteristics of the Extreme Ultraviolet (EUV) radiation, we describe the ENEA Discharge Produced Plasma (DPP) EUV source. The DPP emits 100-ns duration EUV pulses, in the λ = 10-18 nm wavelength spectral range. The in-band energy per pulse is about 30 mJ/sr at 10 Hz repetition rate. In addition to the already performed characterizations, we recently exploited high purity monocrystalline diamond detectors developed at the Department of Industrial Engineering of the University of Rome “Tor Vergata”. The configuration of the electrodes of the used devices was the interdigitated one, particularly suitable for fast measurements. Thanks to the rapid temporal response of these detectors, the fast peaks of EUV emission (7-8 ns FWHM), superimposed on the main pulses, have been characterized much better than when using silicon PIN diodes. These rapid emission peaks occur at the maximum heating and radial compression of the plasma column. Finally, by using the DPP source, a useful characterization and calibration of the diamond detectors has been obtained in the λ = 10-18 nm range, by comparison with a reference absolute PIN diode.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
