Point defects in insulating materials are successfully used for radiation detectors. Among them, colour centres in lithium fluoride (LiF) are well known for application in dosimeters and in light-emitting devices and lasers. LiF thin-film detectors for extreme ultraviolet radiation, soft and hard X-rays, based on photoluminescence from aggregate electronic defects, are currently under development for imaging application with laboratory radiation sources, e.g. laser-driven plasma sources and conventional X-ray tubes, as well as large-scale facilities, e.g. synchrotrons and free-electron lasers. Among the peculiarities of these detectors, noteworthy ones are the very high intrinsic spatial resolution (< 100 nm) across a large field of view (> 1 cm 2) and the wide dynamic range. Moreover, they are insensitive to ambient light and no development process is needed. The latent images stored in the LiF thin layer can be read with fluorescence optical microscopy techniques. These detectors prove to be highly versatile, as LiF is sensitive to almost any kind of radiation, including charged particles and neutrons, and can be grown in the form of polycrystalline thin films, whose photoluminescence response can be tailored trough the control of the growth conditions. © Società Italiana di Fisica.

Versatile lithium fluoride thin-film solid-state detectors for nanoscale radiation imaging

Nichelatti, E.;Vincenti, M.A.;Bonfigli, F.;Montereali, R.M.
2013

Abstract

Point defects in insulating materials are successfully used for radiation detectors. Among them, colour centres in lithium fluoride (LiF) are well known for application in dosimeters and in light-emitting devices and lasers. LiF thin-film detectors for extreme ultraviolet radiation, soft and hard X-rays, based on photoluminescence from aggregate electronic defects, are currently under development for imaging application with laboratory radiation sources, e.g. laser-driven plasma sources and conventional X-ray tubes, as well as large-scale facilities, e.g. synchrotrons and free-electron lasers. Among the peculiarities of these detectors, noteworthy ones are the very high intrinsic spatial resolution (< 100 nm) across a large field of view (> 1 cm 2) and the wide dynamic range. Moreover, they are insensitive to ambient light and no development process is needed. The latent images stored in the LiF thin layer can be read with fluorescence optical microscopy techniques. These detectors prove to be highly versatile, as LiF is sensitive to almost any kind of radiation, including charged particles and neutrons, and can be grown in the form of polycrystalline thin films, whose photoluminescence response can be tailored trough the control of the growth conditions. © Società Italiana di Fisica.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.12079/701
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