Schwarzschild objectives are widely used in the extreme ultraviolet (EUV)/soft X-ray spectral region both as reduction and magnification optics, e.g. for small-field projection lithography and microscopy, respectively. When using a Schwarzschild objective as a micro-exposure tool (MET) at high spatial resolution (half-pitch≤0.1 μm), in addition to the tight requirements on the design and surface figure for the single optics, also an accurate alignment between the two mirrors is needed to reach the planned spatial imaging detail. Ideally, at-wavelength alignment should be done in order to overcome limitations due to diffractive effects. While this can be easily performed on synchrotron beam lines, it becomes time expensive (and components consuming) on low-power laboratory plasma sources. In this work we propose and test a new technique to align a EUV Schwarzschild objective by means of ultraviolet light. The aligned objective allowed the attainment of lithographic patterning with edge response of 90 nm, as part of the laboratory-scale MET for EUV projection lithography realized at the ENEA Frascati Research Centre. © 2012 Elsevier B.V.
New technique for aberration diagnostics and alignment of an extreme ultraviolet Schwarzschild objective
Torre, A.;Murra, D.;Mezi, L.;Flora, F.;Di Lazzaro, P.;Bollanti, S
2013-01-01
Abstract
Schwarzschild objectives are widely used in the extreme ultraviolet (EUV)/soft X-ray spectral region both as reduction and magnification optics, e.g. for small-field projection lithography and microscopy, respectively. When using a Schwarzschild objective as a micro-exposure tool (MET) at high spatial resolution (half-pitch≤0.1 μm), in addition to the tight requirements on the design and surface figure for the single optics, also an accurate alignment between the two mirrors is needed to reach the planned spatial imaging detail. Ideally, at-wavelength alignment should be done in order to overcome limitations due to diffractive effects. While this can be easily performed on synchrotron beam lines, it becomes time expensive (and components consuming) on low-power laboratory plasma sources. In this work we propose and test a new technique to align a EUV Schwarzschild objective by means of ultraviolet light. The aligned objective allowed the attainment of lithographic patterning with edge response of 90 nm, as part of the laboratory-scale MET for EUV projection lithography realized at the ENEA Frascati Research Centre. © 2012 Elsevier B.V.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
