The optical response by NO 2 gas adsorption at different concentrations has been investigated, at room temperature, in ZnO nanostructured films grown by controlled vapor phase deposition. The variation (quenching) in the photoluminescence signal from excitonic and defects bands, due to the interactions between the oxidizing gas molecules and the sample surface, has been detected and dynamic responses and calibration curves as a function of gas concentration have been obtained and analyzed for each band. We showed that the sensing response results larger in excitonic band than in defect one and that the emission signal rises from two different quenchable and unquenchable states. A simple model was proposed in order to explain the quenching processes on the emission intensity and to correlate them to the morphological features of the samples. Finally, the reversibility of the quenching effects has also been tested at high gas concentration. © 2012 American Institute of Physics.
Photoluminescence quenching processes by NO2 adsorption in ZnO nanostructured films
Valerini D.;
2012-01-01
Abstract
The optical response by NO 2 gas adsorption at different concentrations has been investigated, at room temperature, in ZnO nanostructured films grown by controlled vapor phase deposition. The variation (quenching) in the photoluminescence signal from excitonic and defects bands, due to the interactions between the oxidizing gas molecules and the sample surface, has been detected and dynamic responses and calibration curves as a function of gas concentration have been obtained and analyzed for each band. We showed that the sensing response results larger in excitonic band than in defect one and that the emission signal rises from two different quenchable and unquenchable states. A simple model was proposed in order to explain the quenching processes on the emission intensity and to correlate them to the morphological features of the samples. Finally, the reversibility of the quenching effects has also been tested at high gas concentration. © 2012 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
