Thin films of chromium oxides were deposited on Si substrates by KrF laser ablation of a chromium target in O2 atmosphere (0.05-5.0 Pa). Films exhibit semiconducting properties with band gap increasing (0.32-0.71 eV) with increasing pressure from 0.05 to 1.0 Pa. The largest values of the thermoelectromotive force coefficient S (̃3.5-4.5 mV/K) were measured in the temperature range 270-290 K for the film deposited at 1.0 Pa. The S coefficient decreases in the same temperature range for the film deposited at lower oxygen pressures.
Deposition of chromium oxide thin films with large thermoelectromotive force coefficient by reactive pulsed laser ablation
Valerini D.;
2010-01-01
Abstract
Thin films of chromium oxides were deposited on Si substrates by KrF laser ablation of a chromium target in O2 atmosphere (0.05-5.0 Pa). Films exhibit semiconducting properties with band gap increasing (0.32-0.71 eV) with increasing pressure from 0.05 to 1.0 Pa. The largest values of the thermoelectromotive force coefficient S (̃3.5-4.5 mV/K) were measured in the temperature range 270-290 K for the film deposited at 1.0 Pa. The S coefficient decreases in the same temperature range for the film deposited at lower oxygen pressures.File in questo prodotto:
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