Several fields such as particle physics, space exploration, and high-energy physics, use Commercial Off-The-Shelf (COTS) electronic components in a high-radiation operative environment. These operating conditions can cause significant damage to electronic circuits, affecting their operational features and thus the reliability of the entire facility. Qualifying and characterizing these components against radiation is essential to ensure their proper functioning in harsh conditions. This study investigates the effect of stress-testing electronic components used in high-radiation environments with various types of radiation sources. The components were exposed to gamma rays, laser-driven protons, conventionally accelerated protons, and neutrons, analyzing the devices parameters after different irradiation conditions. The results indicate significant degradation in electrical performance due to radiation-induced defects and significant variations of the effects at same dose delivery. We show that laser-driven proton irradiation achieves equivalent stress-testing with doses two orders of magnitude lower and much quicker than other radiation sources, demonstrating a much higher stress-testing efficiency.

Laser-driven proton sources for efficient radiation testing

Ampollini A.;Astorino M. D.;Bazzano G.;Cemmi A.;Colangeli A.;Di Sarcina I.;Loreti S.;Nenzi P.;Pagano G.;Panza F.;Ronsivalle C.;
2025-01-01

Abstract

Several fields such as particle physics, space exploration, and high-energy physics, use Commercial Off-The-Shelf (COTS) electronic components in a high-radiation operative environment. These operating conditions can cause significant damage to electronic circuits, affecting their operational features and thus the reliability of the entire facility. Qualifying and characterizing these components against radiation is essential to ensure their proper functioning in harsh conditions. This study investigates the effect of stress-testing electronic components used in high-radiation environments with various types of radiation sources. The components were exposed to gamma rays, laser-driven protons, conventionally accelerated protons, and neutrons, analyzing the devices parameters after different irradiation conditions. The results indicate significant degradation in electrical performance due to radiation-induced defects and significant variations of the effects at same dose delivery. We show that laser-driven proton irradiation achieves equivalent stress-testing with doses two orders of magnitude lower and much quicker than other radiation sources, demonstrating a much higher stress-testing efficiency.
2025
TID
TNSA
Transistors
Gamma radiation
Laser-plasma acceleration
Neutrons
Protons
Radiation hardness
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/86830
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