The surface charge generated on an Al0.24 Ga0.76 AsGaAs quantum well sample by electron bombardment was monitored by measuring the change in the conductivity of the channel. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime tau=0.30±0.02 s. The average charging efficiency, µ0, defined as the ratio of the charge collected by the surface to the beam current times the charging time, is µ0± 0.001. Surface charging proves to be an effective method for contactless gating of field effect devices.

Charging efficiency and lifetime of image-bound electrons on a dielectric surface

2005

Abstract

The surface charge generated on an Al0.24 Ga0.76 AsGaAs quantum well sample by electron bombardment was monitored by measuring the change in the conductivity of the channel. Upon turning off the electron bombardment the surface charge on adsorbed layers of xenon and water at 8 K decays in room temperature darkness with a lifetime tau=0.30±0.02 s. The average charging efficiency, µ0, defined as the ratio of the charge collected by the surface to the beam current times the charging time, is µ0± 0.001. Surface charging proves to be an effective method for contactless gating of field effect devices.
Applicazioni di fisica e tecnologie nucleari
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.12079/91
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